D12320VF25V Datasheet, PDF (614/1146 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents

Section 17 ROM
17.4.9 Register Configuration
The registers used to control the on-chip flash memory when enabled are shown in table 17.6.
In order to access the FLMCR1, FLMCR2, EBR1, and EBR2 registers, the FLSHE bit must be set
to 1 in SYSCR2 (except RAMER).
Table 17.6 Flash Memory Registers
Register Name
Flash memory control register 1
Flash memory control register 2
Erase block register 1
Erase block register 2
System control register 2
Abbreviation
FLMCR1^*6
FLMCR2^*6
EBR1^*6
EBR2^*6
SYSCR2^*7
R/W
R/W^*3
R/W^*3
R/W^*3
R/W^*3
R/W
Initial Value
H'00^*4
H'00
H'00^*5
H'00^*5
H'00
Address^*1
H'FFC8^*2
H'FFC9^*2
H'FFCA^*2
H'FFCB^*2
H'FF42
RAM emulation register
RAMER
R/W
H'00
H'FEDB
Notes: 1. Lower 16 bits of the address.
2. Flash memory. Registers selection is performed by the FLSHE bit in system control
register 2 (SYSCR2).
3. In modes in which the on-chip flash memory is disabled, a read will return H'00, and
writes are invalid. Writes are also disabled when the FWE bit is cleared to 0 in
FLMCR1.
4. When a high level is input to the FWE pin, the initial value is H'80.
5. When a low level is input to the FWE pin, or if a high level is input and the SWE bit in
FLMCR1 is not set, these registers are initialized to H'00.
6. FLMCR1, FLMCR2, EBR1, and EBR2 are 8-bit registers. Only byte accesses are valid
for these registers, the access requiring 2 states.
7. The SYSCR2 register can only be used in the F-ZTAT versions. In the mask ROM
versions this register will return an undefined value if read, and cannot be modified.
Rev.7.00 Feb. 14, 2007 page 580 of 1108
REJ09B0089-0700