D12320VF25V Datasheet, PDF (15/1146 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents

Item
Page
20.2.6 Flash
848
Memory
Characteristics
Table 20.19 Flash
Memory
Characteristics
20.1 Electrical
817
Characteristics of
Mask ROM Version
(H8S/2319,
H8S/2318,
H8S/2317S,
H8S/2316S,
H8S/2315, H8S/2314)
and ROMless Version
(H8S/2312S)
20.2.6 Flash Memory 849
Characteristics
Table 20.19 Flash
Memory
Characteristics
850
20.3.2 DC
853
Characteristics
Table 20.21 DC
Characteristics
Revision (See Manual for Details)
"⎯Preliminary⎯" deleted from table 20.19
Section 20.1 title amended
Table 20.19 amended
Item
Programming time^{*1 *2 *4}
Erase time^{*1 *3 *6}
Reprogramming count
Data retention time^*9
Programming Wait time after SWE bit setting^*1
Symbol
tP —
tE —
N WEC
t DRP
x
Min Typ Max
10
200
50
1000
100^*7 10000^*8 —
10 —
—
1
—
—
Test
Unit
Conditions
ms/
128 bytes
ms/block
Times
Years
μs
Notes 7 to 9 added
Notes: 7. Minimum number of times for which all characteristics
are guaranteed after rewriting (Guarantee range is 1 to
minimum value).
8. Reference value for 25°C (as a guideline, rewriting should
normally function up to this value).
9. Data retention characteristic when rewriting is performed
within the specification range, including the minimum value.
Table 20.21 amended
Item
VCC start voltage^*5
VCC rising edge^*5
Symbol Min Typ
VCCSTART —
—
SVCC —
—
MaxU
0.4
10
Test
nit Conditions
V
ms/V
Note 5 added
Note: 5. Applies on condition that the RES pin is low level at
power on.
Rev.7.00 Feb. 14, 2007 page xiii of xxxii
REJ09B0089-0700