|
D12320VF25V Datasheet, PDF (721/1146 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents | |||
|
◁ |
Section 17 ROM
When abnormalities, such as runaway of programming/erasing are detected, these modes enter
the error protection state and the programming/erasing processing is suspended.
⢠Programming/erasing time
The flash memory programming time is 3 ms (typ) for 128-byte simultaneous programming,
which is equivalent to 25 µs per byte. The erasing time is 1000 ms (typ) per 64-kbyte block.
⢠Number of programming
Flash memory programming can be performed a minimum of 100 times.
Rev.7.00 Feb. 14, 2007 page 687 of 1108
REJ09B0089-0700
|
▷ |