D12320VF25V Datasheet, PDF (876/1146 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents

Section 20 Electrical Characteristics
Item
Symbol Min Typ
Test
Max
Unit Conditions
Three-state Ports 1, 2, 3,
| ITSI |
—
—
leakage
A to G
current
(off state)
1.0
μA Vin = 0.5 V to
VCC – 0.5 V
Input pull-up Ports A to E
–Ip
MOS current
Input
RES
Cin
capacitance _NMI
10
—
—
—
—
—
300
μA VCC = 3.0 V
to 3.6 V,
Vin = 0 V
30
pF Vin = 0 V
30
pF f = 1 MHz
All input pins
except RES and
NMI
—
—
15
Current
Normal operation ICC^*4
—
50 (3.3 V) 100
dissipation^*2 _{Sleep mode}
35 (3.3 V) 80
Standby mode^*3
—
0.01
10
—
—
80
pF ^Ta ^{= 25°C}
mA f = 25 MHz
mA
μA Ta ≤ 50°C
μA 50°C < Ta
Analog
During A/D and AICC
—
0.2
2.0
mA
power
D/A conversion
(3.0 V)
supply
Idle
voltage
—
0.01
5.0
μA
Reference During A/D and AICC
—
1.4
3.0
mA
power
D/A conversion
(3.0 V)
supply
Idle
voltage
—
0.01
5.0
μA
RAM standby voltage
VRAM
2.0
—
—
V
Notes: 1. If the A/D and D/A converters are not used, do not leave the AVCC, Vref, and AVSS
pins open. Connect the AVCC and Vref pins to VCC, and the AVSS pin to VSS.
2. Current dissipation values are for VIH min = VCC – 0.2 V and VIL max = 0.2 V with all output
pins unloaded and all MOS input pull-ups in the off state.
3. The values are for VRAM ≤ VCC < 3.0 V, VIH min = VCC × 0.9, and VIL max = 0.3 V.
4. ICC depends on VCC and f as follows:
ICC max = 1.0 (mA) + 1.10 (mA/(MHz × V)) × VCC × f (normal operation)
ICC max = 1.0 (mA) + 0.88 (mA/(MHz × V)) × VCC × f (sleep mode)
Rev.7.00 Feb. 14, 2007 page 842 of 1108
REJ09B0089-0700