D12320VF25V Datasheet, PDF (774/1146 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents

Section 17 ROM
(1) When an interrupt, such as NMI, has occurred during programming/erasing
(2) When the relevant block area of flash memory is read during programming/erasing (including
a vector read or an instruction fetch)
(3) When a SLEEP instruction (including software standby mode) is executed during
programming/erasing
(4) When a bus master other than the CPU, such as DTC or BREQ, has obtained the bus right
during programming/erasing
Error protection is cancelled only by a power-on reset or by hardware-standby mode. Note that the
reset should only be released after providing a reset input over a period longer than the normal 100
μs period. Since high voltages are applied during programming/erasing of the flash memory, some
voltage may remain after the error-protection state has been entered. For this reason, it is
necessary to reduce the risk of damage to the flash memory by extending the reset period so that
the charge is released.
The state-transition diagram in figure 17.75 shows transitions to and from the error-protection
state.
Program mode
Erase mode
RES = 0 or HSTBY = 0
Reset or standby
(Hardware protection)
Read disabled
Programming/erasing
enabled FLER=0
Error occurrence
Err_{(oSroofctwcuarrreenscteandRbEy)SH=0SToBr Y=0}
Read disabled
Programming/erasing disabled
FLER=0
RES=0 or
HSTBY=0
Program/erase interface
register is in its initial state.
Error protection mode ^{Software-standby mode}
Error-protection mode
(Software standby)
Read enabled
Programming/erasing disabled
FLER=1
Cancel
software-standby
mode
Read disabled
programming/erasing disabled
FLER=1
Program/erase interface
register is in its initial state.
Figure 17.75 Transitions to and from the Error-Protection State
Rev.7.00 Feb. 14, 2007 page 740 of 1108
REJ09B0089-0700