HD64F3048VTF8 Datasheet, PDF (702/903 Pages) Renesas Technology Corp – Hardware Manual Renesas 8-Bit Single-Chip

Section 21 Electrical Characteristics
Notes: 1. Make each time setting in accordance with the program/program-verify flowchart or
erase/erase-verify flowchart.
2. Programming time per 128 bytes (Shows the total period for which the P bit in the flash
memory control register 1 (FLMCR1) is set. It does not include the programming
verification time.)
3. Block erase time (Shows the total period for which the E bit in FLMCR1 is set. It does
not include the erase verification time.)
4. To specify the maximum programming time (t_P(max)) in the 128-byte programming
flowchart, set the maximum value (1000) for the maximum programming count (N).
The wait time after P bit setting should be changed as follows according to the value of
the programming counter (n).
Programming counter (n) = 1 to 6:
t_sp30 = 30 µs
Programming counter (n) = 7 to 1000:
t_sp200 = 200 µs
Programming counter (n) [in additional programming] = 1 to 6: t_sp10 = 10 µs
5. For the maximum erase time (t_E(max)), the following relationship applies between the
wait time after E bit setting (t_se) and the maximum erase count (N):
t_E(max) = Wait time after E bit setting (t_se) × maximum erase count (N)
To set the maximum erase time, the values of t_se and N should be set so as to satisfy
the above formula.
Examples: When t_se = 100 [ms], N = 12 times
When t_se = 10 [ms], N = 120 times
Rev. 3.00 Sep 27, 2006 page 674 of 872
REJ09B0325-0300