HD64F3048VTF8 Datasheet, PDF (685/903 Pages) Renesas Technology Corp – Hardware Manual Renesas 8-Bit Single-Chip

Section 21 Electrical Characteristics
Item
Symbol Min
Typ Max
Unit Test Conditions
Three-state Ports 1 to 6, |I_TSI|
—
leakage
8 to B
current
(off state)
—
1.0
µA V_in = 0.5 to
V_CC –0.5 V
Input pull-up Ports 2, 4,
–I
50
—
300
µA V = 0 V
P
in
MOS current and 5
Input
FWE
capacitance _NMI
C_in
—
—
All input pins
—
except NMI,
FWE
Current
Normal
I_CC^*6
—
dissipation^*2 operation^*5
—
60
—
50
—
15
45
60
pF V_IN = 0 V,
pF ^{f = fmin,}
pF ^{Ta = 25°C}
mA f = 25 MHz
Sleep mode
—
35
50
mA
Module standby
—
mode^*4
Standby mode^*3
—
—
Analog
During A/D
AI_CC
—
power
conversion
supply
current
During A/D and
D/A conversion
—
20
25
1
10
—
80
0.5
1.5
0.5
1.5
mA
µA T_a ≤ 50°C
µA 50°C < T_a
mA AV_CC = 5.0 V
mA
Idle
—
0.01 5.0
µA DASTE = 0
Reference During A/D
AI_CC
—
current
conversion
0.4
0.8
mA V_REF = 5.0 V
During A/D and
D/A conversion
—
1.5
3.0
mA
Idle
—
0.01 5.0
µA DASTE = 0
RAM standby voltage
V_RAM
2.0
—
—
V
Notes: 1.
2.
If the A/D and D/A converters are not used, do not leave the AV_CC, AV_SS, and V_REF pins
open. Connect AV_CC and V_REF to V_CC, and connect AV_SS to V_SS.
Current dissipation values are for V_IH min = V_CC –0.5 V and V_IL max = 0.5 V with all
output pins unloaded and the on-chip pull-up transistors in the off state.
3.
The
values
are
for
V
RAM
≤
V
CC
<
4.5
V,
V
IH
min
=
V
CC
×
0.9,
and
V
IL
max
=
0.3
V.
4. Module standby current values apply in sleep mode with all modules halted.
5. The current dissipation value for flash memory program/erase operations (T_a = 0°C to
+75°C) is 10 mA (max.) greater than the current dissipation value for normal operation.
Rev. 3.00 Sep 27, 2006 page 657 of 872
REJ09B0325-0300