HD64F3048VTF8 Datasheet, PDF (699/903 Pages) Renesas Technology Corp – Hardware Manual Renesas 8-Bit Single-Chip

Section 21 Electrical Characteristics
21.1.6 Flash Memory Characteristics
Table 21.11 lists the flash memory characteristics.
Table 21.11 Flash Memory Characteristics (1)
Conditions: V_CC = 4.5 V to 5.5 V, AV_CC = 4.5 V to 5.5 V, V_REF = 4.5 V to AV_CC, V_SS = AV_SS = 0 V,
T_a = 0°C to +75°C (program/erase operating temperature range)
Item
Symbol Min Typ Max Unit
Notes
Programming time^{*1 *2 *4}
Erase time^{*1 *3 *5}
Reprogramming count
Programming Wait time after SWE bit setting^*1
Wait time after PSU bit setting^*1
Wait time after P bit setting^{*1 *4}
t_P
t_E
N_WEC
t_sswe
t_spsu
t_sp30
— 10 200 ms/
128 bytes
— 100 1200 ms/block
— — 100 Times
1 1 — µs
50 50 — µs
28 30 32 µs
Programming
time wait
t_sp200
198 200 202 µs
Programming
time wait
Erase
t_sp10
Wait time after P bit clear^*1
t_cp
Wait time after PSU bit clear^*1
t_cpsu
Wait time after PV bit setting^*1
t_spv
Wait time after H'FF dummy write^*1 t_spvr
Wait time after PV bit clear^*1
t_cpv
Wait time after SWE bit clear^*1
t_cswe
Maximum programming count^{*1 *4} N
Wait time after SWE bit setting^*1 t_sswe
Wait time after ESU bit setting^*1 t_sesu
Wait time after E bit setting^{*1 *5}
t_se
Wait time after E bit clear^*1
t_ce
Wait time after ESU bit clear^*1
t_cesu
Wait time after EV bit setting^*1
t_sev
Wait time after H'FF dummy write^*1 t_sevr
Wait time after EV bit clear^*1
t_cev
Wait time after SWE bit clear^*1
t_cswe
Maximum erase count^{*1 *5}
N
8 10 12 µs
5 5 — µs
5 5 — µs
4 4 — µs
2 2 — µs
2 2 — µs
100 100  µs
— — 1000 Times
1 1 — µs
100 100 — µs
10 10 100 ms
10 10 — µs
10 10 — µs
20 20 — µs
2 2 — µs
4 4 — µs
100 100  µs
12 — 120 Times
Additional
programming
time wait
Erase time wait
Rev. 3.00 Sep 27, 2006 page 671 of 872
REJ09B0325-0300