HD64F3048VTF8 Datasheet, PDF (682/903 Pages) Renesas Technology Corp – Hardware Manual Renesas 8-Bit Single-Chip

Section 21 Electrical Characteristics
H8/3048 Group
H8/3048B Group
Item
Symbol Unit
H8/3048
F-ZTAT
(Dual
Power
Supply)
H8/3048
H8/3047
H8/3045
H8/3044
H8/3048
ZTAT
H8/3048
F-ONE
(Single
Power
Supply)
H8/3048B
Mask
ROM
Absolute Power supply
V_in
V –0.3 to –0.3 to –0.3 to –0.3 to –0.3 to
maximum ^voltage
+7.0
+7.0
+7.0 +7.0
+7.0
ratings
(5 V
(5 V
operation operation
model) model)
–0.3 to
+4.6
(3 V
operation
model)
–0.3 to
+4.6
(3 V
operation
model)
DC charac- RESO pin
teristics
specification
Yes
Yes
Yes
—
Yes
FWE pin
specification
—
—
—
Yes
—
Determination
level for applying
high voltage (12 V)
Standby current
I_CC^*3
(T_a ≤ 50°C)
Standby current
(50°C < T_a)
AC charac- Clock cycle time
t_cyc
teristics
RES pulse width
t_RESW
RESO output
t_RESD
delay time
Yes
—
—
—
—
µA Max 5
Max 5
Max 5 Max 10 Max 10
Max 20 Max 20 Max 20 Max 80 Max 80
ns Max 1000 Max 1000 Max 1000 Max 500 Max 500
t_cyc
Min 10
Min 10
Min 10
ns Max 100 Max 100 Max 100
Min 20
—
Min 20
—
RESO output
t_RESOW
t_cyc Min 132 Min 132 Min 132
—
—
pulse width
Flash
memory
charac-
teristics^*4
Refer to
—
the
H8/3048
Group
Hardware
Manual
(revision
7.0) for
details.
—
See table
—
21.11
Notes: 1. The operating temperature range for flash memory programming/erasing is 0°C to +75°.
2. Connect an external capacitor between the V_CL pin and GND.
3. See the DC Characteristics table for current dissipation during operation.
4. Refer to the program/erase algorithms for details of flash memory characteristics.
Rev. 3.00 Sep 27, 2006 page 654 of 872
REJ09B0325-0300