HD64F3048VTF8 Datasheet, PDF (603/903 Pages) Renesas Technology Corp – Hardware Manual Renesas 8-Bit Single-Chip

Section 18 ROM (H8/3048F-ONE: Single Power Supply, H8/3048B Mask ROM Version)
18.2 Flash Memory Features
The H8/3048F-ONE has 128 kbytes of on-chip flash memory. The features of the flash memory
are summarized below.
• Four flash memory operating modes
 Program mode
 Erase mode
 Program-verify mode
 Erase-verify mode
• Programming/erase methods
The flash memory is programmed 128 bytes at a time. Block erase (in single-block units) can
be performed. To erase the entire flash memory, each block must be erased in turn. Block
erasing can be performed as required on 1 kbyte, 28 kbytes, and 32 kbytes blocks.
• Programming/erase times
The flash memory programming time is 10 ms (typ.) for simultaneous 128-byte programming,
equivalent approximately to 80 µs (typ.) per byte, and the erase time is 100 ms (typ.).
• Reprogramming capability
The flash memory can be reprogrammed up to 100 times.
• On-board programming modes
There are two modes in which flash memory can be programmed/erased/verified on-board:
 Boot mode
 User program mode
In the boot mode, the transferred program from the host can be recognized.
• Automatic bit rate adjustment
With data transfer in boot mode, the LSI’s bit rate can be automatically adjusted to match the
transfer bit rate of the host.
• Flash memory emulation in RAM
Flash memory programming can be emulated in real time by overlapping a part of RAM onto
flash memory.
• Protect modes
There are three protect modes, hardware, software, and error which allow protected status to be
designated for flash memory program/erase/verify operations.
• PROM mode
Flash memory can be programmed/erased in PROM mode, using a PROM programmer, as
well as in on-board programming mode.
Rev. 3.00 Sep 27, 2006 page 575 of 872
REJ09B0325-0300