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SH7144 Datasheet, PDF (734/773 Pages) Renesas Technology Corp – Hitachi SuperH RISC engine
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26.5 Flash Memory Characteristics
Table 26.18 shows flash memory characteristics.
Table 26.18 Flash Memory Characteristics
Conditions: VCC = PLLVCC =3.3 V ± 0.3 V, AVCC = 3.3 V ± 0.3 V, AVCC = VCC ± 0.3 V,
AVref = 3.0 V to AVCC , VSS = PLLVSS = AVSS = 0 V, Ta = –20°C to +75°C
(regular specifications), Ta = –40°C to +85°C (wide-range specifications),
When programming or erasing flash memory, Ta = –20°C to +75°C.
Item
Symbol Min Typ Max Unit
Remarks
Programming time*1, *2, *4
tP
— 10
200 ms/
128 bytes
Erase time*1, *3, *5
Reprogramming count
Programming Wait time after SWE bit setting*1
Wait time after PSU bit setting*1
Wait time after P bit setting*1, *4
tE
NWEC
tsswe
tspsu
tsp30
— 100 1200 ms/block
100∗6 10000∗7 — Times
1
1
— µs
50 50
— µs
28 30
32 µs
Programming
time wait
tsp200
198 200 202 µs
Programming
time wait
tsp10
8
10
12 µs
Additional-
programming
time wait
Wait time after P bit clear*1
tcp
Wait time after PSU bit clear*1
tcpsu
Wait time after PV bit setting*1
tspv
Wait time after H'FF dummy write*1 tspvr
Wait time after PV bit clear*1
tcpv
Wait time after SWE bit clear*1
tcswe
Maximum programming count*1, *4 N
5
5
5
5
4
4
2
2
2
2
100 100
——
— µs
— µs
— µs
— µs
— µs
— µs
1000 Times
Rev. 2.0, 09/02, page 694 of 732
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