C8051F970-A-GM Datasheet, PDF (19/454 Pages) Silicon Laboratories – Low Power Capacitive Sensing MCU with up to 32 kB of Flash

C8051F97x
Table 1.11. ADC0 Electrical Characteristics
V_DD = 1.8 to 3.6 V V, VREF = 1.65 V (REFSL[1:0] = 11), –40 to +85 °C unless otherwise specified.
Parameter
Conditions
DC Accuracy
Min
Typ Max
Resolution
10
Integral Nonlinearity
Differential Nonlinearity
(Guaranteed Monotonic)
—
±0.5
±1
—
±0.5
±1
Offset Error
Full Scale Error
—
±<1
±2
—
±1
±2.5
Dynamic Performance (10 kHz sine-wave single-ended input, 1 dB below Full Scale, 300 ksps)
Signal-to-Noise Plus Distortion
Signal-to-Distortion
62
65
—
—
70
—
Spurious-Free Dynamic Range
Conversion Rate
—
72
—
SAR Conversion Clock
—
—
8.33
Conversion Time in SAR Clocks
10-bit Mode
8-bit Mode
13
—
—
11
—
—
Track/Hold Acquisition Time
Throughput Rate
1.5
—
—
—
—
300
Analog Inputs
ADC Input Voltage Range
Single Ended (AIN+ – GND)
0
Absolute Pin Voltage with respect to
Single Ended
0
GND
— VREF
—
V_DD
Sampling Capacitance
Input Multiplexer Impedance
1x Gain
0.5x Gain
—
28
—
—
26
—
—
5
—
Power Specifications
Power Supply Current 
(V_DD supplied to ADC0)
Power Supply Rejection
Conversion Mode (300 ksps)
—
800
—
Tracking Mode (0 ksps)
—
680
—
External VREF
—
76
—
Units
bits
LSB
LSB
LSB
LSB
dB
dB
dB
MHz
clocks
µs
ksps
V
V
pF
k
µA
dB
Rev 1.0
19