C8051F970-A-GM Datasheet, PDF (11/454 Pages) Silicon Laboratories – Low Power Capacitive Sensing MCU with up to 32 kB of Flash

C8051F97x
Table 1.2. Global Electrical Characteristics (Continued)
–40 to +85 °C, 25 MHz system clock unless otherwise specified.
Parameter
Conditions
Min
Typ
Max units
Digital Supply Current—CPU Active (Normal Mode, fetching instructions from Flash)
I_DD3, ⁴
V_DD = 1.8–3.6 V,
—
5
Freq = 24.5 MHz (includes preci-
sion oscillator current)
6
mA
V_DD = 1.8–3.6 V, Freq = 20 MHz —
4
—
mA
(includes low power oscillator
current)
V_DD = 1.8 V, Freq = 1 MHz
—
420
—
µA
(includes external CMOS
oscillator / GPIO current)
V_DD = 3.6 V, Freq = 1 MHz
—
440
—
µA
(includes external CMOS
oscillator / GPIO current)
I_DD Frequency Sensitivity^{1, 3,}
V_DD = 1.8–3.6 V,
Freq = 32.768 kHz
(includes RTC current)
—
95
—
µA
V_DD = 1.8-3.6 V, T = 25 °C, Freq —
230
— µA/MHz
< 14 MHz
(Flash oneshot active)
V_DD = 1.8-3.6 V, T = 25 °C, Freq —
130
— µA/MHz
> 14 MHz
(Flash oneshot bypassed)
Notes:
1. Based on device characterization data; Not production tested.
2. SYSCLK must be at least 32 kHz to enable debugging.
3. The values in this table are obtained with the CPU executing an “sjmp $” loop, which is the compiled form of a while(1)
loop in C. See the power measurement code examples for more information.
4. Includes oscillator and regulator supply current.
Rev 1.0
11