C8051F970-A-GM Datasheet, PDF (14/454 Pages) Silicon Laboratories – Low Power Capacitive Sensing MCU with up to 32 kB of Flash

C8051F97x
Table 1.3. Port I/O DC Electrical Characteristics
V_DD = 1.8 to 3.6 V, –40 to +85 °C unless otherwise specified.
Parameter
Output High Voltage 
(High Drive Strength, 
PnDRV.n = 1)
Output High Voltage 
(Low Drive Strength, 
PnDRV.n = 0)
Output Low Voltage 
(High Drive Strength, 
PnDRV.n = 1)
Conditions
I_OH = –3 mA, Port I/O push-pull
I_OH = –10 µA
I_OH = –10 mA
I_OH = –1 mA
I_OH = –10 µA
I_OH = –3 mA
I_OL = 8.5 mA
I_OL = 25 mA
Output Low Voltage 
(Low Drive Strength, 
PnDRV.n = 0)
I_OL = 1.4 mA
I_OL = 4 mA
Input High Voltage
Input Low Voltage
Input Leakage Current
V_DD = 2.0 to 3.6 V
V_DD = 2.0 to 3.6 V
Weak Pull–up Off
Weak Pull-up On, V_IN=0 V,
V_DD = 1.8 V
Weak Pull-up On, V_IN = 0 V,
V_DD = 3.6 V
Min
Typ
V_DD – 0.7
V_DD – 0.1
—
—
—
see chart
V_DD – 0.7
V_DD – 0.1
—
—
—
see chart
—
—
—
see chart
—
—
—
see chart
V_DD – 0.6
—
—
—
—
—
—
4
—
23
Max
—
—
—
—
—
—
0.7
—
0.7
—
—
0.6
0.5
—
—
Units
V
V
V
V
V
V
V
V
V
V
V
µA
µA
µA
Table 1.4. I²C Slave Electrical Characteristics
Parameter
V_DD Range
Internal I²C pull-ups
Condition
Min
Typ
Max
units
Required to meet I²C spec
1.8
—
3.6
V
Required to meet I²C spec
—
6
—
k
Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the devices at those or any other conditions above those indicated in the
operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may
affect device reliability.
14
Rev 1.0