C8051F970-A-GM Datasheet, PDF (18/454 Pages) Silicon Laboratories – Low Power Capacitive Sensing MCU with up to 32 kB of Flash

C8051F97x
Table 1.6. Power Management Electrical Specifications
V_DD = 1.8 to 3.6 V, –40 to +85 °C unless otherwise specified.
Parameter
Conditions
Idle Mode Wake-up Time
Suspend Mode Wake-up Time
Low power oscillator
Precision oscillator
Sleep Mode Wake-up Time
Min
Typ
2
—
—
400
—
1.3
—
2
Max
Units
3
SYSCLKs
—
ns
—
µs
—
µs
Table 1.7. Flash Electrical Characteristics
V_DD = 1.8 to 3.6 V, –40 to +85 °C unless otherwise specified.
Parameter
Conditions
Flash Size
Endurance
Erase Cycle Time
Write Cycle Time
See ordering information for flash sizes of
all C8051F97x devices
Min
16384
20k
20
50
Typ
—
100k
30
60
Max
32768
—
40
70
Units
bytes
ms
µs
Table 1.8. Internal Precision Oscillator Electrical Characteristics
V_DD = 1.8 to 3.6 V; T_A = –40 to +85 °C unless otherwise specified; Using factory-calibrated settings.
Parameter
Conditions
Min
Typ
Oscillator Frequency
Oscillator Supply Current 
(from V_DD)
–40 to +85 °C,
V_DD = 1.8–3.6 V
24
24.5
25 °C; includes bias current
of 90–100 µA
—
300
Max
25
—
Units
MHz
µA
Table 1.9. Internal Low-Power Oscillator Electrical Characteristics
V_DD = 1.8 to 3.6 V; T_A = –40 to +85 °C unless otherwise specified; Using factory-calibrated settings.
Parameter
Conditions
Min
Typ
Oscillator Frequency (Low Power
Oscillator)
–40 to +85 °C,
V_DD = 1.8–3.6 V
18
20
Oscillator Supply Current 
(from V_DD)
25 °C
No separate bias current
—
100
required
Max
22
—
Units
MHz
µA
Table 1.10. SmaRTClock Characteristics
V_DD = 1.8 to 3.6 V; T_A = –40 to +85 °C unless otherwise specified; Using factory-calibrated settings.
Parameter
Conditions
Min
Typ
Oscillator Frequency (LFO)
11
16.4
Max
22
Units
kHz
18
Rev 1.0