C8051F970-A-GM Datasheet, PDF (10/454 Pages) Silicon Laboratories – Low Power Capacitive Sensing MCU with up to 32 kB of Flash

C8051F97x
1. Electrical Characteristics
Throughout the Electrical Characteristics chapter, “V_DD” refers to the Supply Voltage.
1.1. Electrical Characteristics
All electrical parameters in all tables are specified under the conditions listed in Table 1.1, unless stated otherwise.
Table 1.1. Recommended Operating Conditions
Parameter
Symbol
Conditions
Min Typ Max Units
Temperature Range
T_A
–40
25
85
°C
Supply Voltage
V_DD
1.8
3
3.6
V
*Note: All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions.
Typical values apply at nominal supply voltages and an operating temperature of 25 °C unless otherwise noted.
Table 1.2. Global Electrical Characteristics
–40 to +85 °C, 25 MHz system clock unless otherwise specified.
Parameter
Conditions
Min
Typ
Max units
Supply Voltage (V_DD)
RAM Data Retention Voltage¹
SYSCLK (System Clock)²
1.8
3.0
3.6
V
—
1.4
—
V
0
—
25
MHz
T_SYSH (SYSCLK High Time)
T_SYSL (SYSCLK Low Time)
Specified Operating Temperature
Range
18
—
—
ns
18
—
—
ns
–40
—
+85
°C
Notes:
1. Based on device characterization data; Not production tested.
2. SYSCLK must be at least 32 kHz to enable debugging.
3. The values in this table are obtained with the CPU executing an “sjmp $” loop, which is the compiled form of a while(1)
loop in C. See the power measurement code examples for more information.
4. Includes oscillator and regulator supply current.
10
Rev 1.0