MMC2107 Datasheet, PDF (594/618 Pages) –

Freescale Semiconductor, Inc.
Electrical Specifications
11. Maximum source impedance is application-dependent. Error resulting from pin leakage depends on junction leakage into
the pin and on leakage due to charge-sharing with internal capacitance. Error from junction leakage is a function of external
source impedance and input leakage current. In the following expression, expected error in result value due to junction
leakage is expressed in voltage (V_ERRJ):
V_ERRJ = R_S x I_Off
where:
I_Off is a function of operating temperature.
Charge-sharing leakage is a function of input source impedance, conversion rate, change in voltage between successive
conversions, and the size of the filtering capacitor used. Error levels are best determined empirically. In general, continuous
conversion of the same channel may not be compatible with high-source impedance.
12. For a maximum sampling error of the input voltage ≤ 1 LSB, then the external filter capacitor, C_f ≥ 1024 x C_SAMP. The value
of C_SAMP in the new design may be reduced.
22.10 FLASH Memory Characteristics
The FLASH memory characteristics are shown in Table 22-9,
Table 22-10, Figure 22-2, and Figure 22-1.
Table 22-9. FLASH Program and Erase Characteristics
(V_DDF = 3.135 to 3.465 V, V_PP = 4.75 to 5.25 V, T_A = T_L to T_H)
Parameter
Symbol
Min
Typ
Max
Unit
Number of erase pulses
E_Pulse
8
8
20
—
Erase pulse time
t_Erase
See Table 9-11. Required Erase Algorithm
on page 219.
Erase recovery time
t_{E_Off}
4.0
4.8
6.0
µs
Number of program pulses
P_Pulse
—
500
Note 1
—
Program pulse time
t_PROG
See Table 9-9. Required Programming
Algorithm on page 213.
Program recovery time
t_{P_Off}
4.0
4.8
6.0
µs
1. Maximum pulses vary with V_PP.
Table 22-10. FLASH EEPROM Module Life Characteristics
(V_DDF = 2.7 to 3.6 V, V_PP = 4.75 to 5.25 V, T_A = T_L to T_H)
Parameter
Symbol
Value
Maximum number of guaranteed program/ erase cycles⁽¹⁾
P/E
100⁽²⁾
Data retention at average operating temperature of 85°C
Retention
10
1. A program/erase cycle is defined as switching the bits from 1 ➝ 0 ➝ 1.
2. Reprogramming of a FLASH array block prior to erase is not required.
Unit
Cycles
Years
Technical Data
594
Electrical Specifications
For More Information On This Product,
Go to: www.freescale.com
MMC2107 – Rev. 2.0
MOTOROLA