MMC2107 Datasheet, PDF (208/618 Pages) –

Freescale Semiconductor, Inc.
Non-Volatile Memory FLASH (CMFR)
NOTE:
CAUTION:
8. In CMFRCTL, set the EHV bit.
If a program page buffer word has not received a programming write, no
programming voltages are applied to the drain of the corresponding
word in the array. At this point, writing to the program page buffers is
disabled and causes a bus error until SES has been cleared and set.
9. Read CMFRCTL until HVS = 0.
10. In CMFRCTL, clear the EHV bit.
11. Verify the program by reading the words of the pages that are
being programmed. These are program margin reads. A bit that
was successfully programmed returns a 0 during a margin read. It
returns a 1 if it has been unsuccessfully programmed. If any bit
intended to be programmed does not return a 0 after reading all
the locations, the margin read has failed. If the margin read is
successful continue to step 12, otherwise do the following:
a. Write new pulse width parameters (if required, see Table 9-9
for the required programming algorithm) CLKPE and CLKPM.
b. Write new values for PAWS and NVR (if required, see
Table 9-9)
c. Go back to step 8 to apply additional pulses.
To reduce the time for verification, read two locations in each array
block that is being programmed after reading a non-programmed
bit. After a location has been verified (all bits are programmed), it
is not necessary to reverify the location, as no further
programming voltages are applied to the drain of the
corresponding bits.
After a program pulse, read at least one location with address bit 5 = 0
and one location with address bit 5 = 1 on each programmed page.
Failure to do so may result in the loss of information in the CMFR array,
and a full erase of all blocks being programmed must be done before the
CMFR can be used reliably.
12. In CMFRCTL, clear the SES bit.
13. If more information needs to be programmed, go to step 3.
Technical Data
208
Non-Volatile Memory FLASH (CMFR)
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MMC2107 – Rev. 2.0
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