MMC2107 Datasheet, PDF (185/618 Pages) –

Freescale Semiconductor, Inc.
Non-Volatile Memory FLASH (CMFR)
Glossary of Terms
9.6 Glossary of Terms
Array block – CMFR array subdivision is a 16-Kbyte contiguous block
of information. Each array block can be erased independently.
BIU – Bus interface unit that controls access and operation of the CMFR
CMFR – CDR MoneT FLASH ARray
Erase interlock write – A write to any CMFR array address after
initializing the erase sequence
Erase margin read – Special off-page read of the CMFR array in which
the CMFR hardware adjusts the reference of the sense amplifier to
check for correct erase operation. All CMFR off-page reads between the
erase interlock write and clearing the SES bit are erase margin reads.
Initialize program/erase sequence – The write to the high-voltage
control register that changes the SES bit from a 0 to a 1
MoneT – The Motorola one-transistor bitcell
Off-page read – Array read operation that requires two clocks and
updates a page buffer
On-page read – Array read operation that accesses information in one
of the read page buffers and requires one clock.
Overprogrammed – By exceeding the specified programming time
and/or voltage, a CMFR bit can be overprogrammed. This causes
erased bits in the same column in the same array block to read as
programmed.
Programming write – A write to a CMFR array address to transfer
information into a program page buffer. The CMFR accepts
programming writes after initializing the program sequence until the EHV
bit is changed from a 0 to a 1.
Program margin read – Special off-page read of the CMFR array in
which the CMFR hardware adjusts the reference of the sense amplifier
to check for correct program operation. All CMFR array off-page reads
between the first programming write and clearing the SES bit are
program margin reads.
MMC2107 – Rev. 2.0
MOTOROLA
Non-Volatile Memory FLASH (CMFR)
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Technical Data
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