MMC2107 Datasheet, PDF (214/618 Pages) –

Freescale Semiconductor, Inc.
Non-Volatile Memory FLASH (CMFR)
9.8.5 Erasing
To modify the charge stored in the isolated element of a bit from a logic 0
state to a logic 1 state, an erase operation is required. The erase
operation cannot change the logic 1 state to a logic 0 state; this transition
must be done by the program operation. Erase is a bulk operation that
affects the stored charge of all the isolated elements in an array block.
To make the block erasable, the array is divided into blocks that are
physically isolated from each other. Each of the array blocks may be
erased in isolation or in any combination. The array block size is fixed for
all blocks at 16 Kbytes and the module is comprised of eight blocks.
Array blocks that are protected (PROTECT[M] = 1) are not erased.
The array blocks selected for erase operation are determined by
BLOCK[7:0].
NOTE: Erasing BLOCK 0 also erases the shadow information.
The erase sequence is outlined in 9.8.5.1 Erase Sequence and
depicted in the flowchart form in Figure 9-9.
Technical Data
214
Non-Volatile Memory FLASH (CMFR)
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MMC2107 – Rev. 2.0
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