HD64F3039F18 Datasheet, PDF (622/710 Pages) Renesas Technology Corp – Renesas 16-Bit Single-Chip Microcomputer H8 Family / H8/300H Series

Appendix B Internal I/O Register Field
FLMCR—Flash Memory Control Register
H'40
Bit
7
6
5
4
3
2
1
0
FWE SWE ESU PSU
EV
PV
E
P
Modes
1 to 4,
and 6
Initial value
Read/Write
0
R
Modes Initial value 1/0
5 and 7 Read/Write
R
0
0
0
0
0
0
0
R
R
R
R
R
R
R
0
0
0
0
0
0
0
R/W
R/W
R/W
R/W
R/W
R/W R/W
Flash memory
Program mode
0 Program mode cleared (Initial value)
1 Transition to program mode
[Setting condition]
When FWE = 1, SWE = 1, and PSU = 1
Erase mode
0 Erase mode cleared (Initial value)
1 Transition to erase mode
[Setting condition]
When FWE = 1, SWE = 1, and ESU = 1
Program-verify mode
0 Program-verify mode cleared (Initial value)
1 Transition to program-verify mode
[Setting condition]
When FWE = 1 and SWE = 1
Erase-verify mode
0 Erase-verify mode cleared (Initial value)
1 Transition to erase-verify mode
[Setting condition]
When FWE = 1 and SWE = 1
Program setup
0 Program setup cleared (Initial value)
1 Program setup
[Setting condition]
When FWE = 1 and SWE = 1
Erase setup
0 Erase setup cleared (Initial value)
1 Erase setup
[Setting condition]
When FWE = 1 and SWE = 1
Software write enable bit
0 Program/erase disabled (Initial value)
1 Program/erase enabled
[Setting condition]
When FWE = 1
Flash write enable bit
0 When a low level is input to the FWE pin (hardware protection state)
1 When a high level is input to the FWE pin
Note: This register is used only in the flash memory versions.
Reading the corresponding address in a mask ROM version will always return 1s, and writes to this address are disabled.
Fix the FWE pin low in mode 6.
Rev.3.00 Mar. 26, 2007 Page 598 of 682
REJ09B0353-0300