HD64F3039F18 Datasheet, PDF (502/710 Pages) Renesas Technology Corp – Renesas 16-Bit Single-Chip Microcomputer H8 Family / H8/300H Series

Section 15 ROM
Table 15.12 DC Characteristics in Memory Read Mode
Conditions: V_CC = 5.0 V ±10%, V_SS = 0 V, T_a = 25°C ±5°C
Item
Symbol Min Typ Max
Unit Test Conditions
Input high
voltage
0₇–0₀, A₁₆–A₀ V_IH
2.2 —
Vcc +0.3 V
Input low
voltage
0₇–0₀, A₁₆–A₀ V_IL
0.3 —
0.8
Schmitt trigger OE, CE, WE V_T–
input voltage
V_T+
1.0 —
2.5
2.0 —
3.5
V_T+ – V_T– 0.4
—
—
Output high
voltage
0 –0
70
V
2.4 —
—
OH
V
V
V
V
V
I = –200 µA
OH
Output low
voltage
0₇–0₀
V_OL
—
—
0.45
V
I_OL = 1.6 mA
Input leakage 0₇–0₀, A₁₆–A₀ | I_LI |
—
—
2
µA
current
V_CC current
Reading
I_cc
—
40
65
mA
Programming I_cc
—
50
85
mA
Erasing
I_cc
—
50
85
mA
Note: For the electrical characteristics of the flash memory version, see section 18.2.1, Absolute
Maximum Ratings.
Exceeding the absolute maximum ratings may cause permanent damage to the chip.
Rev.3.00 Mar. 26, 2007 Page 478 of 682
REJ09B0353-0300