HD64F3039F18 Datasheet, PDF (512/710 Pages) Renesas Technology Corp – Renesas 16-Bit Single-Chip Microcomputer H8 Family / H8/300H Series

Section 15 ROM
15.8.9 Notes on Memory Programming
• When programming addresses which have previously been programmed, carry out auto-
erasing before auto-programming (figure 15.24).
• When performing programming using PROM mode on a chip that has been
programmed/erased in an on-board programming mode, auto-erasing is recommended before
carrying out auto-programming.
Notes: 1. The flash memory is initially in the erased state when the device is shipped by Renesas.
For other chips for which the erasure history is unknown, it is recommended that auto-
erasing be executed to check and supplement the initialization (erase) level.
2. In the PROM mode, auto-programming to a 128-byte programming unit block should
be performed only once.
Do not perform additional programming to a programmed 128-byte programming unit
block.
To reprogram, perform auto-programming after auto-erasing.
Reprogram to
programmed address
Auto-erase (chip batch)
Auto-program
End
Figure 15.24 Reprogramming to Programmed Address
15.9 Notes on Flash Memory Programming/Erasing
The following describes notes when using the on-board programming mode, RAM emulation
function, and PROM mode.
(1) Program/erase with the specified voltage and timing.
Applied voltages in excess of the rating can permanently damage the device.
Use a PROM writer that supports the Renesas Technology 128 kbytes flash memory on-board
microcomputer device type.
Do not set the PROM writer at the HN28F101. If the PROM writer is set to the HN28F101 by
mistake, a high level can be input to the FWE pin and the LSI can be destroyed.
Rev.3.00 Mar. 26, 2007 Page 488 of 682
REJ09B0353-0300