HD64F3039F18 Datasheet, PDF (564/710 Pages) Renesas Technology Corp – Renesas 16-Bit Single-Chip Microcomputer H8 Family / H8/300H Series

Section 18 Electrical Characteristics
Item
Symbol Min
Typ Max
Unit Test Conditions
Input
STBY, NMI,
|I_in|
—
leakage
RES, MD₂,
current
MD , MD
1
0
Port 7
—
FWE
—
Three-state Ports 1, 2, 3, 5, |I_TSI|
—
leakage
6, 8 to B
current
(off state)
—
1.0
—
1.0
—
10
—
1.0
µA V_in = 0.5 V to
V_CC –0.5 V
µA V_in = 0.5 V to
AV_CC –0.5 V
µA V = 0.5 V to
in
V_CC –0.5 V
µA V_in = 0.5 V to
V_CC –0.5 V
Input pull-up Ports 2 and 5 –I
10
—
300
µA V = 3.0 V to
p
CC
current
5.5 V,
V =0V
in
Input
NMI, RES
C_in
—
capacitance _{All input pins}
—
except NMI
—
50
—
20
pF V_in = 0 V,
pF ^{f = 1 MHz,}
T = 25°C
a
and RES
Current
Normal
I
CC
*⁴
—
dissipation operation
*² *⁵
Sleep mode
—
15
(3.0 V)
10
(3.0 V)
41.5
(5.5 V)
30.5
(5.5 V)
mA f = 10 MHz
mA f = 10 MHz
Standby mode*³
—
—
Analog
During A/D
AI_CC
—
power
conversion
—
supply
current
Idel
—
0.01 5.0
—
20.0
1.3
2.5
1.7
2.8
0.02 10.0
µA T_a ≤ 50°C
50°C < T_a
mA AV_CC = 3.0 V
AV_CC = 5.0 V
µA
RAM standby voltage
V_RAM
2.0
—
—
V
Notes: 1. If the A/D converter is not used, do not leave the AV_CC and AV_SS pins open.
Connect AV_CC to V_CC, and connect AV_SS to V_SS.
2. Current dissipation values are for V min = VCC –0.5 V and V max = 0.5 V with all
IH
IL
output pins unloaded and the on-chip pull-up transistors in the off state.
3. The values are for V_RAM ≤ V_CC < 3.0 V, V_IH min = VCC × 0.9, and V_IL max = 0.3 V.
4. I depends on V and f as follows:
CC
CC
I_CC max = 3.0 (mA) + 0.7 (mA/MHz ⋅ V) × V_CC × f [normal mode]
I
CC
max
=
3.0
(mA)
+
0.5
(mA/MHz
⋅
V)
×
V
CC
×
f
[sleep
mode]
5. The current dissipation value when programming/erasing flash memory (T_a = 0°C to
+75°C (regular specifications), T_a = 0°C to +85°C (wide-range specifications)) is 20 mA
(max) higher than the current dissipation value in normal operation.
Rev.3.00 Mar. 26, 2007 Page 540 of 682
REJ09B0353-0300