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HD64F3039F18 Datasheet, PDF (573/710 Pages) Renesas Technology Corp – Renesas 16-Bit Single-Chip Microcomputer H8 Family / H8/300H Series
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Section 18 Electrical Characteristics
18.2.5 Flash Memory Characteristics
Table 18.15 shows the flash memory characteristics.
Table 18.15 Flash Memory Characteristics (1)
Conditions: VCC = 4.5 V to 5.5 V, AVCC = 4.5 V to 5.5 V, VSS = AVSS = 0 V
Ta = 0°C to +75°C (program/erase operating temperature range: regular
specifications), Ta = 0°C to +85°C (program/erase operating temperature range:
wide-range specifications)
Item
Symbol Min Typ Max Unit
Test
condition
Programming time*1 *2 *4
tP
Erase time*1 *3 *5
tE
Reprogramming count
NWEC
Programming Wait time after SWE bit setting*1
x
—
10
200 ms/32 bytes
—
100 300 ms/block
—
—
100 Times
10
—
—
µs
Wait time after PSU bit setting*1
y
50
—
—
µs
Wait time after P bit setting*1 *4
z
150 —
500 µs
Wait time after P bit clear*1
α
10
—
—
µs
Wait time after PSU bit clear*1
β
10
—
—
µs
Wait time after PV bit setting*1
γ
4
—
—
µs
Wait time after H'FF dummy write*1 ε
2
—
—
µs
Wait time after PV bit clear*1
η
4
—
—
µs
Maximum programming count*1 *4 N
—
—
403 Times
Erase
Wait time after SWE bit setting*1
x
10
—
—
µs
Wait time after ESU bit setting*1
y
200 —
—
µs
Wait time after E bit setting*1 *5
z
5
—
10
ms
Wait time after E bit clear*1
α
10
—
—
µs
Wait time after ESU bit clear*1
β
10
—
—
µs
Wait time after EV bit setting*1
γ
20
—
—
µs
Wait time after H'FF dummy write*1 ε
2
—
—
µs
Wait time after EV bit clear*1
η
5
—
—
µs
Maximum erase count*1 *5
N
30
—
60
Times
Notes: 1. Set the times according to the program/erase algorithms.
2. Programming time per 32 bytes (Shows the total time the flash memory control register
(FLMCR) is set. It does not include the programming verification time.)
Rev.3.00 Mar. 26, 2007 Page 549 of 682
REJ09B0353-0300
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