MC9S12T64 Datasheet, PDF (575/608 Pages) Motorola, Inc – Specification

Freescale Semiconductor, Inc.
Electrical Characteristics
Flash EEPROM Characteristics
Table 113 NVM Timing Characteristics
Conditions are shown in Table 106 unless otherwise noted
Num
1
2
Rating
External Oscillator Clock
Bus Frequency for Programming or Erase
Operations
Symbol Min
f_NVMOSC
2
f_NVMBUS
1
Typ
Max Unit
16 ⁽¹⁾
MHz
MHz
3 Operating Frequency
4 Single Word Programming Time
5
Flash Burst Programming Time for
Consecutive Word
6 Flash Burst Programming Time for 32 Words
7 Sector Erase Time
8 Mass Erase Time
9 Blank Check Time per Block
1. Restrictions for oscillator in crystal mode apply!
f_NVMOP
t_swpgm
t_bwpgm
t_brpgm
t_era
t_mass
t_check
150
46 ⁽²⁾
20.4 ⁽²⁾
678.4 ⁽²⁾
20 ⁽⁴⁾
100 ⁽⁴⁾
11⁽⁵⁾
200
kHz
85 ⁽³⁾
µs
35.7 ⁽³⁾
µs
1190.7 ⁽³⁾ µs
26.7 ⁽³⁾ ms
133 ⁽³⁾
ms
32778⁽⁶⁾ t_bus
2. Minimum Programming times are achieved under maximum NVM operating frequency f_NVMOP and maximum bus frequen-
cy f_bus.
3. Maximum Erase and Programming times are achieved under particular combinations of f_NVMOP and bus frequency f_bus.
Refer to formulae in subsections from Single Word Programming through Mass Erase for guidance.
4. Minimum Erase times are achieved under maximum NVM operating frequency f_NVMOP.
5. Minimum time. If first word in the array is not blank.
6. Maximum time to complete check on erased block.
NVM Reliability
The reliability of the NVM blocks is guaranteed by stress test during
qualification, constant process monitors and burn-in to screen early life
failures.
The program/erase cycle count on the sector is incremented every time
a sector or mass erase event is executed.
NOTE: All values shown in Table 114 are target values and subject to further
extensive characterization.
Electrical Characteristics
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MC9S12T64Revision 1.1.1