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MC9S12T64 Datasheet, PDF (573/608 Pages) Motorola, Inc – Specification
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Freescale Semiconductor, Inc.
Electrical Characteristics
Flash EEPROM Characteristics
Flash EEPROM Characteristics
Flash EEPROM
timing
The time base for all Flash EEPROM program or erase operations is
derived from the oscillator. A minimum oscillator frequency fNVMOSC is
required for performing program or erase operations. The Flash
EEPROM module does not have any means to monitor the frequency
and will not prevent program or erase operation at frequencies above or
below the specified minimum. Attempting to program or erase the Flash
EEPROM module at a lower frequency a full program or erase transition
is not assured.
The Flash EEPROM program and erase operations are timed using a
clock derived from the oscillator using the FCLKDIV register. The
frequency of this clock must be set within the limits specified as fNVMOP.
The minimum program and erase times shown in Table 113 are
calculated for maximum fNVMOP and maximum fbus. The maximum times
are calculated for minimum fNVMOP and minimum fbus.
Single Word
Programming
The programming time for single word programming is dependant on the
bus frequency as a well as on the frequency f¨NVMOP and can be
calculated according to the following formula.
tswpgm = 9 ⋅ -f-N----V----1M-----O----P-- + 25 ⋅ -f-b--1--u---s-
Burst Programming
This applies only to the Flash where up to 32 words in a row can be
programmed consecutively using burst programming by keeping the
command pipeline filled. The time to program a consecutive word can be
calculated as:
tbwpgm = 4 ⋅ -f-N----V----1M-----O----P-- + 9 ⋅ -f-b--1--u---s-
The time to program a whole row is:
Electrical Characteristics
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MC9S12T64Revision 1.1.1
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