MC9S12T64 Datasheet, PDF (194/608 Pages) Motorola, Inc – Specification

Freescale Semiconductor, Inc.
Flash EEPROM 64K
‘0’. The high voltage required to program and erase is generated
internally by on-chip charge pumps.
All Flash blocks can be programmed or erased at the same time,
however it is not possible to read from a Flash block while it is being
erased or programmed.
The Flash is ideal for program and data storage for single-supply
applications allowing for field reprogramming without requiring external
programming voltage sources.
WARNING: A word must be erased before being programmed. Cumulative
programming of bits within a word is not allowed.
Glossary
Banked Register
A register operating on one Flash block which shares the same register
address as the equivalent registers for the other Flash blocks. The active
register bank is selected by a bank-select bit in the unbanked register
space.
Common Register A register which operates on all Flash blocks.
Command
Sequence
A three-step MCU instruction sequence to program, erase or
erase-verify a Flash block.
Erase Sector
512 bytes of Flash (8 rows of 32 words)
Flash Block
32K byte Flash macro organized as 16K by 16bit Words. Includes high
voltage generation and parametric test features.
Flash Module
Includes Bus Interface, Command Control and two Flash blocks of 32K
bytes.
MC9S12T64Revision 1.1.1
Flash EEPROM 64K
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