HD6432633 Datasheet, PDF (978/1453 Pages) Renesas Technology Corp – Series of Microcomputers (MCUs: microcomputer units)

*3
Erase setup
state
Normal mode
*1
ESU1 = 1
ESU1 = 0
FWE = 1 FWE = 0
*2
On-board
programming mode
Software programming
disable state
SWE1 = 1
SWE1 = 0
Software
programming
enable
state
EV1 = 1
EV1 = 0
PSU1 = 1
Erase-verify
mode
*4
PSU1 = 0
Program
setup state
PV1 = 1
PV1 = 0
E1 = 1
E1 = 0
Erase mode
P1 = 1
P1 = 0
Program mode
Program-verify
mode
Notes: In order to perform a normal read of flash memory, SWE must be cleared to 0. Also note that verify-reads
can be performed during the programming/erasing process.
*1
: Normal mode
: On-board programming mode
*2 Do not make a state transition by setting or clearing multiple bits simultaneously.
*3 After a transition from erase mode to the erase setup state, do not enter erase mode without passing
through the software programming enable state.
*4 After a transition from program mode to the program setup state, do not enter program mode without
passing through the software programming enable state.
Figure 22-11 FLMCR1 Bit Settings and State Transitions
22.7.1 Program Mode
When writing data or programs to flash memory, the program/program-verify flowchart shown in
figure 22-12 should be followed. Performing program operations according to this flowchart will
enable data or programs to be written to flash memory without subjecting the device to voltage
stress or sacrificing program data reliability. Programming should be carried out 128 bytes at a
time.
The wait times after bits are set or cleared in the flash memory control register 1 (FLMCR1) and
the maximum number of programming operations (N1 + N2) are shown in table 25-13 and 26-13
in section 25.6 and 26.6, Flash Memory Characteristics.
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