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HD6432633 Datasheet, PDF (953/1453 Pages) Renesas Technology Corp – Series of Microcomputers (MCUs: microcomputer units) | |||
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22.4 Flash Memory Overview
22.4.1 Features
The H8S/2633 Series has 256 kbytes of on-chip flash memory. The features of the flash memory
are summarized below.
⢠Four flash memory operating modes
 Program mode
 Erase mode
 Program-verify mode
 Erase-verify mode
⢠Programming/erase methods
The flash memory is programmed 128 bytes at a time. Block erase (in single-block units) can
be performed. To erase the entire flash memory, each block must be erased in turn. Block
erasing can be performed as required on 4 kbytes, 32 kbytes, and 64 kbytes blocks.
⢠Programming/erase times
The flash memory programming time is 10 ms (typ.) for simultaneous 128-byte programming,
equivalent to 78 µs (typ.) per byte, and the erase time is 100 ms (typ.).
⢠Reprogramming capability
The flash memory can be reprogrammed up to 100 times.
⢠On-board programming modes
There are two modes in which flash memory can be programmed/erased/verified on-board:
 Boot mode
 User program mode
⢠Automatic bit rate adjustment
With data transfer in boot mode, the LSIâs bit rate can be automatically adjusted to match the
transfer bit rate of the host.
⢠Flash memory emulation in RAM
Flash memory programming can be emulated in real time by overlapping a part of RAM onto
flash memory.
⢠Protect modes
There are three protect modes, hardware, software, and error protection, which allow protected
status to be designated for flash memory program/erase/verify operations.
⢠Programmer mode
Flash memory can be programmed/erased in programmer mode, using a PROM programmer,
as well as in on-board programming mode.
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