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HD6432633 Datasheet, PDF (1102/1453 Pages) Renesas Technology Corp – Series of Microcomputers (MCUs: microcomputer units) | |||
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25.6 Flash Memory Characteristics
Table 25-13 Flash Memory Characteristics
Conditions: VCC = PLLVCC = 3.0 V to 3.6 V, PVCC = 4.5 V to 5.5 V, AVCC = 4.5 V to 5.5 V,
VSS = AVSS = PLLVSS = 0 V, Ta = â20°C to +75°C (regular specifications), Ta = â
40°C to +85°C (wide-range specifications)
Item
Symbol Min Typ Max Unit
Programming time*1 *2 *4
tP
â 10 200 ms/128 bytes
Erase time*1 *3 *5
tE
â 100 1000 ms/block
Number of rewrites
NWEC
â
50 100 Times
Programming Wait time after SWE1 bit setting*1 x0
1
â â µs
Wait time after PSU1 bit setting*1 y
50 â â µs
Wait time after P1 bit setting*1 *4 z0
â â 30 µs
z1
â â 10 µs
z2
â â 200 µs
Wait time after P1 bit clearing*1
α
5
â â µs
Wait time after PSU1 bit clearing*1 β
5
â â µs
Wait time after PV1 bit setting*1
γ
4
â â µs
Wait time after H'FF dummy write*1 ε
2
â â µs
Wait time after PV1 bit clearing*1 η
2
â â µs
Maximum number of writes*1 *4
N1
ââ6
Times
N2
â â 994 Times
Common
Wait time after SWE1 bit clearing*1 x1
100 â â µs
Erasing
Wait time after SWE1 bit setting*1 x
1
â â µs
Wait time after ESU1 bit setting*1 y
100 â â µs
Wait time after E1 bit setting*1 *5 z
â â 10 ms
Wait time after E1 bit clearing*1
α
10 â â µs
Wait time after ESU1 bit clearing*1 β
10 â â µs
Wait time after EV1 bit setting*1
γ
6
â â µs
Wait time after H'FF dummy write*1 ε
2
â â µs
Wait time after EV1 bit clearing*1 η
4
â â µs
Maximum number of erases*1 *5
N
â â 100 Times
Notes: *1 Follow the program/erase algorithms when making the time settings.
*2 Programming time per 128 bytes. (Indicates the total time during which the P1 bit is set
in flash memory control register 1 (FLMCR1). Does not include the program-verify
time.)
1048
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