HD6432633 Datasheet, PDF (1138/1453 Pages) Renesas Technology Corp – Series of Microcomputers (MCUs: microcomputer units)

26.6 Flash Memory Characteristics
Table 26-13 Flash Memory Characteristics
Conditions: PV_CC = 4.5 V to 5.5 V, AV_CC = 4.5 V to 5.5 V, V_SS = AV_SS = PLLV_SS = 0 V,
T_a = –20°C to +75°C (regular specifications), T_a = –40°C to +85°C (wide-range
specifications)
Item
Symbol Min Typ Max Unit
Programming time*¹ *² *⁴
t_P
— 10 200 ms/128 bytes
Erase time*¹ *³ *⁵
t_E
— 50 1000 ms/block
Number of rewrites
N_WEC
—
—
100 Times
Programming Wait time after SWE1 bit setting*¹ x0
1
— — µs
Wait time after PSU1 bit setting*¹ y
50 — — µs
Wait time after P1 bit setting*¹ *⁴ z0
— — 30 µs
z1
— — 10 µs
z2
— — 200 µs
Wait time after P1 bit clearing*¹
α
5
— — µs
Wait time after PSU1 bit clearing*¹ β
5
— — µs
Wait time after PV1 bit setting*¹
γ
4
— — µs
Wait time after H'FF dummy write*¹ ε
2
— — µs
Wait time after PV1 bit clearing*¹ η
2
— — µs
Maximum number of writes*¹ *⁴
N1
——6
Times
N2
— — 994 Times
Common
Wait time after SWE1 bit clearing*¹ x1
100 — — µs
Erasing
Wait time after SWE1 bit setting*¹ x
1
— — µs
Wait time after ESU1 bit setting*¹ y
100 — — µs
Wait time after E1 bit setting*¹ *⁵ z
— — 10 ms
Wait time after E1 bit clearing*¹
α
10 — — µs
Wait time after ESU1 bit clearing*¹ β
10 — — µs
Wait time after EV1 bit setting*¹
γ
6
— — µs
Wait time after H'FF dummy write*¹ ε
2
— — µs
Wait time after EV1 bit clearing*¹ η
4
— — µs
Maximum number of erases*¹ *⁵
N
— — 100 Times
Notes: *1 Follow the program/erase algorithms when making the time settings.
*2 Programming time per 128 bytes. (Indicates the total time during which the P1 bit is set
in flash memory control register 1 (FLMCR1). Does not include the program-verify
time.)
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