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HD64F38602R Datasheet, PDF (441/552 Pages) Renesas Technology Corp – Renesas 16-Bit Single-Chip Microcomputer
Section 21 Electrical Characteristics
21.2.8 Flash Memory Characteristics
Table 21.11 lists the flash memory characteristics.
Table 21.11 Flash Memory Characteristics
AVCC = 1.8 V to 3.6 V, VSS = 0.0 V, VCC = 1.8 V to 3.6 V (operating voltage range in reading),
VCC = 3.0 V to 3.6 V (operating voltage range in programming/erasing),
Ta = 0 to +75°C (operating temperature range in programming/erasing)
Item
Programming time (per 128 bytes)*1*2*4
Erasing time (per block)*1*3*6
Maximum programming count
Data retention time
Programming Wait time after setting SWE bit*1
Wait time after setting PSU bit*1
Wait time after setting P bit*1*4
Wait time after clearing P bit*1
Wait time after clearing PSU bit*1
Wait time after setting PV bit*1
Wait time after dummy write*1
Wait time after clearing PV bit*1
Wait time after clearing SWE bit*1
Maximum programming count*1*4*5
Test
Symbol Condition Min.
tP
tE
NWEC
—
—
1000
*8*11
100
*8*12
tDRP
10*10
x
1
y
50
z1
1≤n≤6
28
z2
7 ≤ n ≤ 1000 198
z3
Additional- 8
programming
α
5
β
5
γ
4
ε
2
η
2
θ
100
N
—
Values
Typ. Max.
7
200
100 1200
10000 —
*9
10000 —
*9
——
——
——
30 32
200 202
10 12
——
——
——
——
——
——
— 1000
Unit
ms
ms
Times
Years
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
Times
Rev. 3.00 May 15, 2007 Page 409 of 516
REJ09B0152-0300