HD64F38602R Datasheet, PDF (131/552 Pages) Renesas Technology Corp – Renesas 16-Bit Single-Chip Microcomputer

Section 6 ROM
Section 6 ROM
The features of the 16-Kbyte flash memory built into the flash memory (F-ZTAT) version are
summarized below.
• Programming/erasing methods
The flash memory is programmed 128 bytes at a time. Erasure is performed in single-block
units. The flash memory is configured as follows: 1 Kbyte × 4 blocks and 12 Kbytes × 1 block.
To erase the entire flash memory, each block must be erased in turn.
• On-board programming
On-board programming/erasure can be done in boot mode, in which the boot program built
into this LSI is started to erase or program of the entire flash memory. In normal user program
mode, individual blocks can be erased or programmed.
• Automatic bit rate adjustment
For data transfer in boot mode, this LSI's bit rate can be automatically adjusted to match the
transfer bit rate of the host.
• Programming/erasing protection
Sets software protection against flash memory programming/erasure.
• Power-down mode
Operation of the power supply circuit can be partly halted in subactive mode. As a result, flash
memory can be read with low power consumption.
• Module standby mode
Use of module standby mode enables this module to be placed in standby mode independently
when not used. (For details, refer to section 5.4, Module Standby Function.) However, when
using the on-chip emulator debugger, set the FROMCKSTP bit in clock halt register 1 to 1.
Note: The system clock oscillator must be used when programming or erasing the flash memory.
ROM3560A_000120030300
Rev. 3.00 May 15, 2007 Page 99 of 516
REJ09B0152-0300