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MC9S12G Datasheet, PDF (917/1160 Pages) Freescale Semiconductor, Inc – Ignores external trigger. Performs one conversion sequence and stops. | |||
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128 KByte Flash Module (S12FTMRG128K1V1)
⢠Single bit fault correction and double bit fault detection within a 32-bit double word during read
operations
⢠Automated program and erase algorithm with verify and generation of ECC parity bits
⢠Fast sector erase and phrase program operation
⢠Ability to read the P-Flash memory while programming a word in the EEPROM memory
⢠Flexible protection scheme to prevent accidental program or erase of P-Flash memory
26.1.2.2 EEPROM Features
⢠4 Kbytes of EEPROM memory composed of one 4 Kbyte Flash block divided into 1024 sectors of
4 bytes
⢠Single bit fault correction and double bit fault detection within a word during read operations
⢠Automated program and erase algorithm with verify and generation of ECC parity bits
⢠Fast sector erase and word program operation
⢠Protection scheme to prevent accidental program or erase of EEPROM memory
⢠Ability to program up to four words in a burst sequence
26.1.2.3 Other Flash Module Features
⢠No external high-voltage power supply required for Flash memory program and erase operations
⢠Interrupt generation on Flash command completion and Flash error detection
⢠Security mechanism to prevent unauthorized access to the Flash memory
26.1.3 Block Diagram
The block diagram of the Flash module is shown in Figure 26-1.
MC9S12G Family Reference Manual, Rev.1.01
Freescale Semiconductor
917
This document is valid for the S12G96 and the S12G128 device. All information related to other devices is preliminary.
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