MC9S12G Datasheet, PDF (661/1160 Pages) Freescale Semiconductor, Inc – Ignores external trigger. Performs one conversion sequence and stops.

16 KByte Flash Module (S12FTMRG16K1V1)
• Single bit fault correction and double bit fault detection within a 32-bit double word during read
operations
• Automated program and erase algorithm with verify and generation of ECC parity bits
• Fast sector erase and phrase program operation
• Ability to read the P-Flash memory while programming a word in the EEPROM memory
• Flexible protection scheme to prevent accidental program or erase of P-Flash memory
21.1.2.2 EEPROM Features
• 512 bytes of EEPROM memory composed of one 512 byte Flash block divided into 128 sectors of
4 bytes
• Single bit fault correction and double bit fault detection within a word during read operations
• Automated program and erase algorithm with verify and generation of ECC parity bits
• Fast sector erase and word program operation
• Protection scheme to prevent accidental program or erase of EEPROM memory
• Ability to program up to four words in a burst sequence
21.1.2.3 Other Flash Module Features
• No external high-voltage power supply required for Flash memory program and erase operations
• Interrupt generation on Flash command completion and Flash error detection
• Security mechanism to prevent unauthorized access to the Flash memory
21.1.3 Block Diagram
The block diagram of the Flash module is shown in Figure 21-1.
MC9S12G Family Reference Manual, Rev.1.01
Freescale Semiconductor
661
This document is valid for the S12G96 and the S12G128 device. All information related to other devices is preliminary.