MC9S12G Datasheet, PDF (761/1160 Pages) Freescale Semiconductor, Inc – Ignores external trigger. Performs one conversion sequence and stops.

48 KByte Flash Module (S12FTMRG48K1V1)
• Single bit fault correction and double bit fault detection within a 32-bit double word during read
operations
• Automated program and erase algorithm with verify and generation of ECC parity bits
• Fast sector erase and phrase program operation
• Ability to read the P-Flash memory while programming a word in the EEPROM memory
• Flexible protection scheme to prevent accidental program or erase of P-Flash memory
23.1.2.2 EEPROM Features
• 1.5Kbytes of EEPROM memory composed of one 1.5Kbyte Flash block divided into 384 sectors
of 4 bytes
• Single bit fault correction and double bit fault detection within a word during read operations
• Automated program and erase algorithm with verify and generation of ECC parity bits
• Fast sector erase and word program operation
• Protection scheme to prevent accidental program or erase of EEPROM memory
• Ability to program up to four words in a burst sequence
23.1.2.3 Other Flash Module Features
• No external high-voltage power supply required for Flash memory program and erase operations
• Interrupt generation on Flash command completion and Flash error detection
• Security mechanism to prevent unauthorized access to the Flash memory
MC9S12G Family Reference Manual, Rev.1.01
Freescale Semiconductor
761
This document is valid for the S12G96 and the S12G128 device. All information related to other devices is preliminary.