MC9S12G Datasheet, PDF (915/1160 Pages) Freescale Semiconductor, Inc – Ignores external trigger. Performs one conversion sequence and stops.

Chapter 26
128 KByte Flash Module (S12FTMRG128K1V1)
Revision
Number
V01.11
V01.12
Rev.1.01
Revision
Date
17 Jun 2010
31 aug 2010
31 Jan 2011
Table 26-1. Revision History
Sections
Affected
Description of Changes
26.4.6.1/26-948 Clarify Erase Verify Commands Descriptions related to the bits MGSTAT[1:0]
26.4.6.2/26-949 of the register FSTAT.
26.4.6.3/26-949
26.4.6.14/26-95
9
26.4.6.2/26-949 Updated description of the commands RD1BLK, MLOADU and MLOADF
26.4.6.12/26-95
6
26.4.6.13/26-95
8
26.3.2.9/26-932 Updated description of protection on Section 26.3.2.9
26.1 Introduction
The FTMRG128K1 module implements the following:
• 128Kbytes of P-Flash (Program Flash) memory
• 4 Kbytes of EEPROM memory
The Flash memory is ideal for single-supply applications allowing for field reprogramming without
requiring external high voltage sources for program or erase operations. The Flash module includes a
memory controller that executes commands to modify Flash memory contents. The user interface to the
memory controller consists of the indexed Flash Common Command Object (FCCOB) register which is
written to with the command, global address, data, and any required command parameters. The memory
controller must complete the execution of a command before the FCCOB register can be written to with a
new command.
CAUTION
A Flash word or phrase must be in the erased state before being
programmed. Cumulative programming of bits within a Flash word or
phrase is not allowed.
MC9S12G Family Reference Manual, Rev.1.01
Freescale Semiconductor
915
This document is valid for the S12G96 and the S12G128 device. All information related to other devices is preliminary.