MC9S12G Datasheet, PDF (1108/1160 Pages) Freescale Semiconductor, Inc – Ignores external trigger. Performs one conversion sequence and stops.

Electrical Characteristics
Num C
Rating
Symbol
Min
8 D P-Flash sector erase time
9 D P-Flash phrase programming time
10 D EEPROM sector erase time
11 D EEPROM erase verify (blank check) time
(FTMRG240K2, TMRG192K2)
t_pera
—
t_ppgm
—
t_dera
—
t_dcheck
—
EEPROM erase verify (blank check) time
(FTMRG128K1, FTMRG96K1)
t_dcheck
—
EEPROM erase verify (blank check) time
(FTMRG64K1, FTMRG48K1)
t_dcheck
—
EEPROM erase verify (blank check) time
(FTMRG32K1, FTMRG16K1)
t_dcheck
—
12a D EEPROM one word programming time
t_dpgm1
—
12b D EEPROM two word programming time
t_dpgm2
—
1 _{Typical program and erase times are based on typical fNVMOP and maximum fNVMBUS}
2 _{Maximum program and erase times are based on minimum fNVMOP and maximum fNVMBUS}
3 _{tcyc = 1 / fNVMBUS}
4 _{Typical value for a new device}
Typ¹
20
185
5⁴
—
—
—
—
97
140
Max²
26
200
26
2620
2620
1540
1030
106
154
Unit³
ms
µs
ms
t_cyc
t_cyc
t_cyc
t_cyc
µs
µs
A.6.2 NVM Reliability Parameters
The reliability of the NVM blocks is guaranteed by stress test during qualification, constant process
monitors and burn-in to screen early life failures.
The data retention and program/erase cycling failure rates are specified at the operating conditions noted.
The program/erase cycle count on the sector is incremented every time a sector or mass erase event is
executed.
MC9S12G Family Reference Manual, Rev.1.01
1108
Freescale Semiconductor
This document is valid for the S12G96 and the S12G128 device. All information related to other devices is preliminary.