DRA722_17 Datasheet, PDF (159/408 Pages) Texas Instruments – Infotainment Applications Processor

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DRA722, DRA724, DRA725, DRA726
SPRS956B – MARCH 2016 – REVISED JANUARY 2017
5.7.9 BC1833IHHV Buffers DC Electrical Characteristics
Table 5-17 summarizes the DC electrical characteristics for BC1833IHHV Buffers.
Table 5-17. BC1833IHHV Buffers DC Electrical Characteristics
PARAMETER
Signal Names in MUXMODE 0: on_off;
Balls: Y11;
1.8-V Mode
V_OH
Output high-level threshold (I_OH = 2 mA)
V_OL
I_DRIVE
I_IN
I_OZ
C_PAD
3.3-V Mode
V_OH
V_OL
I_DRIVE
I_IN
I_OZ
C_PAD
Output low-level threshold (I_OL = 2 mA)
Pin Drive strength at PAD Voltage = 0.45V or VDDS-0.45V
Input current at each I/O pin
I_OZ(I_PAD Current) for BIDI cell. This current is contributed by
the tristated driver leakage + input current of the Rx + weak
pullup/pulldown leakage. PAD is swept from 0 to VDDS and
the Max(I_(PAD)) is measured and is reported as I_OZ
Pad capacitance (including package capacitance)
Output high-level threshold (I_OH = 100 µA)
Output low-level threshold (I_OL = 100 µA)
Pin Drive strength at PAD Voltage = 0.45V or VDDS-0.45V
Input current at each I/O pin
I_OZ(I_PAD Current) for BIDI cell. This current is contributed by
the tristated driver leakage + input current of the Rx + weak
pullup/pulldown leakage. PAD is swept from 0 to VDDS and
the Max(I_(PAD)) is measured and is reported as I_OZ
Pad capacitance (including package capacitance)
MIN
VDDS-
0.45
6
6
VDDS-0.2
6
NOM
5.7.10 USBPHY DC Electrical Characteristics
MAX UNIT
V
0.45
V
mA
12
µA
6
µA
4
pF
V
0.2
V
mA
60
µA
60
µA
4
pF
NOTE
USB1 instance is compliant with the USB3.0 SuperSpeed Transmitter and Receiver
Normative Electrical Parameters as defined in the USB3.0 Specification Rev 1.0 dated Jun 6,
2011.
NOTE
USB1 and USB2 Electrical Characteristics are compliant with USB2.0 Specification Rev 2.0
dated April 27, 2000 including ECNs and Errata as applicable.
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Specifications 159