HD64F3437TF16 Datasheet, PDF (657/752 Pages) Hitachi Semiconductor – 12 V must not be applied to the S-mask model (single-power-supply specification), as this may permanently damage the device.

FLMCR1—Flash Memory Control Register 1
• H8/3437SF
(Single-power-supply flash memory only)
H'80
Flash memory
Bit
7
6
5
FWE SWE
—
Initial value
1
0
0
Read/Write
R
R/W
—
4
3
2
1
0
—
EV
PV
E
P
0
0
0
0
0
—
R/W R/W R/W R/W
Program Mode
0 Exit from program mode (initial value)
1 Transition to program mode
[Setting condition]
When SWE = 1
Erase Mode
0 Exit from erase mode (initial value)
1 Transition to erase mode
[Setting condition]
When SWE = 1
Program-Verify Mode
0 Exit from program-verify mode (initial value)
1 Transition to program-verify mode
[Setting condition]
When SWE = 1
Erase-Verify Mode
0 Exit from erase-verify mode (initial value)
1 Transition to erase-verify mode
[Setting condition]
When SWE = 1
Software Write Enable
0 Writes to flash memory disabled (initial value)
1 Writes to flash memory enabled
Flash Write Enable
(Controls programming and erasing of flash memory. In the H8/3437SF,
this bit is always read as 1.)
Note: The FLSHE bit in WSCR must be set to 1 in order for this register to be accessed.
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