HD64F3437TF16 Datasheet, PDF (529/752 Pages) Hitachi Semiconductor – 12 V must not be applied to the S-mask model (single-power-supply specification), as this may permanently damage the device.

21.1.2 Features
Features of the flash memory are listed below.
• Four flash memory operating modes
The flash memory has four operating modes: program mode, program-verify mode, erase
mode, and erase-verify mode.
• Programming and erasing
32 bytes are programmed at a time. Erasing is performed in block units. To erase multiple
blocks, individual blocks must be erased sequentially. In block erasing, 1-kbyte, 28-kbyte, 16-
kbyte, 12-kbyte, and 2-kbyte blocks can be set arbitrarily.
• Program and erase times
The flash memory programming time is 10 ms (typ.) for simultaneous 32-byte programming,
equivalent to 300 µs (typ.) per byte, and the erase time for one block is 100 ms (typ.).
• Erase-program cycles
Flash memory contents can be erased and reprogrammed up to 100 times.
• On-board programming modes
These modes can be used to program, erase, and verify flash memory contents. There are two
modes: boot mode and user programming mode.
• Automatic bit rate alignment
In boot-mode data transfer, the H8/3437SF aligns its bit rate automatically to the host bit rate.
• Protect modes
There are three modes that enable flash memory to be protected from program, erase, and
verify operations: hardware protect mode, software protect mode, and error protect mode.
• Writer mode
As an alternative to on-board programming, the flash memory can be programmed and erased
in writer mode, using a general-purpose PROM programmer.
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