HD64F3437TF16 Datasheet, PDF (519/752 Pages) Hitachi Semiconductor – 12 V must not be applied to the S-mask model (single-power-supply specification), as this may permanently damage the device.

5.0 V
V_CC
12 V
V_PP
5.0 V
t_VPS
Address
CE
Erase setup
Erase
Erase-verify
t_VPH
Valid address
t_AS
t_AH
OE
WE
I/O0 to I/O7
t_OEWS
t_CES
t_WEP
t_CWC
t_CEH
t_CES ^tWEP
t_CES
t_ET
t_{CEH tWEH}
t_DS
t_DH
t_DS
t_DH
Command
input
Command
input
t_WEP
t_CEH
t_OERS
t_DS
t_DH
Command
input
t_VA
t_DF
Valid data
output
Note: Erase-verify data output values may be intermediate between 1 and 0 before erasing has been completed.
Figure 20.19 Erase Timing
20.7 Flash Memory Programming and Erasing Precautions
Read these precautions before using writer mode, on-board programming mode, or flash memory
emulation by RAM.
(1) Program with the specified voltages and timing.
The rated programming voltage (V_PP) of the flash memory is 12.0 V.
If the PROM programmer is set to Hitachi HN28F101 specifications, V_PP will be 12.0 V. Applying
voltages in excess of the rating can permanently damage the device. Take particular care to ensure
that the PROM programmer peak overshoot does not exceed the rated limit of 13 V.
(2) Before programming, check that the chip is correctly mounted in the PROM
programmer. Overcurrent damage to the device can result if the index marks on the PROM
programmer socket, socket adapter, and chip are not correctly aligned.
(3) Don’t touch the socket adapter or chip while programming. Touching either of these can
cause contact faults and write errors.
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