HD64F3437TF16 Datasheet, PDF (409/752 Pages) Hitachi Semiconductor – 12 V must not be applied to the S-mask model (single-power-supply specification), as this may permanently damage the device.

Bit 1—Erase Mode (E):^{*1, *2} Selects transition to or exit from erase mode.
Bit 1: E
0
1
Description
Exit from erase mode
Transition to erase mode
(Initial value)
Bit 0—Program Mode (P):^{*1, *2} Selects transition to or exit from program mode.
Bit 0: P
0
1
Description
Exit from program mode
Transition to program mode
(Initial value)
Notes: *1 Do not set two or more of these bits simultaneously. Do not release or shut off the V_CC
or V_PP power supply when these bits are set.
*2 Set the P or E bit according to the instructions given in section 19.4, Programming and
Erasing Flash Memory.
Set the watchdog timer beforehand to make sure that these bits do not remain set for
longer than the specified times.
For notes on use, see section 19.7, Flash Memory Programming and Erasing
Precautions.
19.2.2 Erase Block Register 1 (EBR1)
EBR1 is an 8-bit register that designates large flash-memory blocks for programming and erasure.
EBR1 is initialized to H'F0 by a reset, in the standby modes, and when 12 V is not applied to FV_PP
pin. When a bit in EBR1 is set to 1, the corresponding block is selected and can be programmed
and erased. Figure 19.2 and table 19.6 show details of a block map.
Bit
7
6
5
4
3
2
1
0
—
—
—
—
LB3
LB2
LB1
LB0
Initial value*
1
1
1
1
0
0
0
0
Read/Write
—
—
—
—
R/W* R/W* R/W* R/W*
Note: * The initial value is H'F0 in modes 2 and 3 (on-chip ROM enabled). In mode 1 (on-chip ROM
disabled), this register cannot be modified and always reads H'FF. For information on
accessing this register, refer to in section 19.7, Flash Memory Programming and Erasing
Precautions (11).
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