HD64F3437TF16 Datasheet, PDF (606/752 Pages) Hitachi Semiconductor – 12 V must not be applied to the S-mask model (single-power-supply specification), as this may permanently damage the device.

23.2.5 Flash Memory Characteristics (H8/3437SF Only)
Table 23.15 shows the flash memory characteristics.
Table 23.15 Flash Memory Characteristics
Conditions: V_CC = 5.0 V ± 10%, AV_CC = 5.0 V ± 10%, V_SS = AV_SS = 0 V, T_a = 0 to +75°C
Item
Test
Symbol Min
Typ
Max Unit Condition
Programming time^{*1, *2, *4}
tP
—
10
200
ms/
32 bytes
Erase time^{*1, *3, *5}
tE
—
100
1200 ms/
block
Reprogramming count
N_WEC
—
—
100
Times
Programming Wait time after x
SWE-bit setting^*1
10
—
—
µs
Wait time after y
PSU-bit setting^*1
50
—
—
µs
Wait time after z
P-bit setting^{*1, *4}
150
—
500
µs
Wait time after α
P-bit clear^*1
10
—
—
µs
Wait time after β
PSU-bit clear^*1
10
—
—
µs
Wait time after γ
PV-bit setting^*1
4
—
—
µs
Wait time after ε
dummy write^*1
2
—
—
µs
Wait time after η
4
—
—
µs
PV-bit clear^*1
Maximum
N
programming
count^{*1, *4, *5}
—
—
403
Times
577