HD64F3437TF16 Datasheet, PDF (467/752 Pages) Hitachi Semiconductor – 12 V must not be applied to the S-mask model (single-power-supply specification), as this may permanently damage the device.

20.1.2 Mode Programming and Flash Memory Address Space
As its on-chip ROM, the H8/3437F has 60 kbytes of flash memory. The flash memory is
connected to the CPU by a 16-bit data bus. The CPU accesses both byte data and word data in two
states.
The H8/3437F’s flash memory is assigned to addresses H'0000 to H'EF7F in mode 2, and
addresses H'0000 to H'F77F in mode 3. The mode pins enable either on-chip flash memory or
external memory to be selected for this area. Table 20.2 summarizes the mode pin settings and
usage of the memory area.
Table 20.2 Mode Pin Settings and Flash Memory Area
Mode
Mode 0
Mode 1
Mode 2
Mode 3
Mode Pin Setting
MD₁
0
MD₀
0
0
1
1
0
1
1
Memory Area Usage
Illegal setting
External memory area
On-chip flash memory area (H'0000 to H'EF7F)
On-chip flash memory area (H'0000 to H'F77F)
20.1.3 Features
Features of the flash memory are listed below.
• Five flash memory operating modes
The flash memory has five operating modes: program mode, program-verify mode, erase
mode, erase-verify mode, and prewrite-verify mode.
• Block erase designation
Blocks to be erased in the flash memory address space can be selected by bit settings. The
address space includes a large-block area (eight blocks with sizes from 2 kbytes to 12 kbytes)
and a small-block area (eight blocks with sizes from 128 bytes to 1 kbyte).
• Program and erase time
Programming one byte of flash memory typically takes 50 µs. Erasing all blocks (60 kbytes)
typically takes 1 s.
• Erase-program cycles
Flash memory contents can be erased and reprogrammed up to 100 times.
• On-board programming modes
These modes can be used to program, erase, and verify flash memory contents. There are two
modes: boot mode and user programming mode.
438