HD64F3437TF16 Datasheet, PDF (622/752 Pages) Hitachi Semiconductor – 12 V must not be applied to the S-mask model (single-power-supply specification), as this may permanently damage the device.

23.4.5 Flash Memory Characteristics
Table 23.27 shows the flash memory characteristics.
Table 23.27 Flash Memory Characteristics
Conditions: V_CC = 3.0 V to 3.6 V, V_CCB = 3.0 V to 3.6 V, AV_CC = 3.0 V to 3.6 V,
V_SS = AV_SS = 0 V, AV_ref = 3.0 to AV_CC, T_a = 0 to +75°C (programming/erasing
operation temperature), Ta = 0 to +85˚C
Item
Test
Symbol Min
Typ
Max Unit Condition
Programming time^{*1, *2, *4}
tP
—
10
200
ms/
32 bytes
Erase time^{*1, *3, *5}
tE
—
100
1200 ms/
block
Reprogramming count
N_WEC
—
—
100
Times
Programming Wait time after x
SWE-bit setting^*1
10
—
—
µs
Wait time after y
PSU-bit setting^*1
50
—
—
µs
Wait time after z
P-bit setting^{*1, *4}
150
—
500
µs
Wait time after α
P-bit clear^*1
10
—
—
µs
Wait time after β
PSU-bit clear^*1
10
—
—
µs
Wait time after γ
PV-bit setting^*1
4
—
—
µs
Wait time after ε
dummy write^*1
2
—
—
µs
Wait time after η
4
—
—
µs
PV-bit clear^*1
Maximum
N
programming
count^{*1, *4, *5}
—
—
403
Times
593