HD64F3437TF16 Datasheet, PDF (452/752 Pages) Hitachi Semiconductor – 12 V must not be applied to the S-mask model (single-power-supply specification), as this may permanently damage the device.

High-Speed, High-Reliability Erasing: The H8/3434F flash memory uses a high-speed, high-
reliability erasing procedure. This procedure provides enhanced erasing speed without subjecting
the device to voltage stress and without sacrificing data reliability. Figure 19.16 shows the basic
high-speed, high-reliability erasing flowchart. Tables 19.15 and 19.16 list the electrical
characteristics during erasing.
Start
Program all bits to 0*
Address = 0
n=0
n+1→n
Erase setup/erase command
Wait (10 ms)
Erase-verify command
Address + 1 → address
No
Wait (6 µs)
Verification?
Go
Last address?
Yes
No go
No
n = 3000?
Yes
End
Fail
Note: * Follow the high-speed, high-reliability programming flowchart in programming all bits. If some bits
are already programmed to 0, program only the bits that have not yet been programmed.
Figure 19.16 High-Speed, High-Reliability Erasing
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