HD64F3437TF16 Datasheet, PDF(406/752 Page) Hitachi Semiconductor – 12 V must not be applied to the S-mask model (single-power-supply specification), as this may permanently damage the device.

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HD64F3437TF16 Datasheet, PDF (406/752 Pages) Hitachi Semiconductor – 12 V must not be applied to the S-mask model (single-power-supply specification), as this may permanently damage the device.

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â¢ Automatic bit-rate alignment

In boot-mode data transfer, the H8/3434F aligns its bit rate automatically to the host bit rate

(maximum 9600 bps).

â¢ Flash memory emulation by RAM

Part of the RAM area can be overlapped onto flash memory, to emulate flash memory updates

in real time.

â¢ Writer mode

As an alternative to on-board programming, the flash memory can be programmed and erased

in writer mode, using a general-purpose PROM programmer. Program, erase, verify, and other

specifications are the same as for HN28F101 standard flash memory.

19.1.4 Block Diagram

Figure 19.1 shows a block diagram of the flash memory.

8

Internal data bus (upper)

8

Internal data bus (lower)

FLMCR

EBR1

EBR2

Bus interface and control section

H'0000

H'0001

H'0002

H'0003

H'0004

H'0005

On-chip flash memory

(32 kbytes)

H'7FFC

H'7FFD

H'7FFE

H'7FFF

Upper byte

Lower byte

(even address) (odd address)

Operating

mode

MD1

MD0

Legend:

FLMCR: Flash memory control register

EBR1: Erase block register 1

EBR2: Erase block register 2

Figure 19.1 Flash Memory Block Diagram

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