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HD64F3437TF16 Datasheet, PDF (454/752 Pages) Hitachi Semiconductor – 12 V must not be applied to the S-mask model (single-power-supply specification), as this may permanently damage the device.
Table 19.16 AC Characteristics in Writer Mode
(Conditions: VCC = 5.0 V ±10%, VPP = 12.0 V ±0.6 V, VSS = 0 V, Ta = 25°C ±5°C)
Item
Symbol Min Typ Max Unit Test Conditions
Command write cycle
Address setup time
Address hold time
t CWC
120 — — ns Figure 19.17
t AS
0
— — ns Figure 19.18*
Figure 19.19
t AH
60 — — ns
Data setup time
t DS
50 — — ns
Data hold time
t DH
10 — — ns
CE setup time
t CES
0
— — ns
CE hold time
t CEH
0
— — ns
VPP setup time
t VPS
100 — — ns
VPP hold time
t VPH
100 — — ns
WE programming pulse width
t WEP
70 — — ns
WE programming pulse high time
t WEH
40 — — ns
OE setup time before command write tOEWS
0
— — ns
OE setup time before verify
t OERS
6
— — µs
Verify access time
t VA
— — 500 ns
OE setup time before status polling tOEPS
120 — — ns
Status polling access time
t SPA
— — 120 ns
Program wait time
t PPW
25 — — ns
Erase wait time
t ET
9
— 11 ms
Output disable time
t DF
0
— 40 ns
Total auto-erase time
t AET
0.5 — 30 s
Note: CE, OE, and WE should be high during transitions of VPP from 5 V to 12 V and from 12 V to
5 V.
* Input pulse level: 0.45 V to 2.4 V
Input rise time and fall time ≤ 10 ns
Timing reference levels: 0.8 V and 2.0 V for input; 0.8 V and 2.0 V for output
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